Product specifications
Characteristic | Value |
|---|---|
| Chip Technology | SiC Diode + IGBT 4 (Trench) |
| Current (A) | 600 A |
| Dimensions (LLxBBxHH) mm | 150x62x17 |
| Features | With Silicon Carbide (SiC) Schottky diodesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientPress-fit pins as auxiliary contactsThermally optimized ceramicUL recognized, file no. E63532 |
| Housing | SEMiX 3p |
| Part Number | 27895300 |
| Product Line | SEMiX |
| Product Status | In production |
| Product Type | SEMiX603GB12E4SiCp |
| Switches | Half-Bridge |
| Technology | Hybrid SiC |
| Typical Applications | AC inverter drivesUPSRenewable energy systems |
| Voltage (V) | 1200 V |