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22896110

SKM200GB12F4SiC3

SEMITRANS 3

Product specifications

Characteristic
Value
Chip Technology
SiC Diode + IGBT 4 fast (Trench)
Current (A)
200 A
Dimensions (LLxBBxHH) mm
106x62x31
Features
  • IGBT4 = 4. Generation Fast Trench (High Speed) IGBT (Infineon)
  • With Silicon Carbide Schottky diodes (ROHM)
  • Insulated copper baseplate using DBC Technology (Direct Bonded Copper)
  • UL recognized, file no. E63532
  • With integrated gate resistor
  • For higher switching frequencies
Housing
SEMITRANS 3
Part Number
22896110
Product Line
SEMITRANS
Product Status
In production new
Product Type
SKM200GB12F4SiC3
Switches
Half-Bridge
Technology
Hybrid SiC
Typical Applications
  • AC inverter drives
  • UPS
  • Electronic welders
  • DC/DC converters
Voltage (V)
1200 V