Product specifications
Characteristic | Value |
|---|---|
| Chip Technology | SiC Diode + IGBT 4 (Trench) |
| Current (A) | 200 A |
| Dimensions (LLxBBxHH) mm | 106x62x31 |
| Features | IGBT4 = 4. Generation Fast Trench IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies |
| Housing | SEMITRANS 3 |
| Part Number | 22892220 |
| Product Line | SEMITRANS |
| Product Status | In production new |
| Product Type | SKM200GB12T4SiC2 |
| Switches | Half-Bridge |
| Technology | Hybrid SiC |
| Typical Applications | AC inverter drivesUPSElectronic weldersDC/DC converters |
| Voltage (V) | 1200 V |